Nanoelectronics for Next-Generation Integrated Circuits

1. Emerging Graphene-based Electronics: Properties to Potentials. 2. Models for Modern Spintronics Memories with Layered Magnetic Interfaces. 3. Evaluation of Magnetic Anisotropy via Intrinsic Spin Infusion. 4. Quantum-dot Cellular Automata (QCA) Nanotechnology for the Next Generation Systems. 5. An Overview of Nanowire Field Effect Transistors For Future Nanoscale Integrated Circuits. 6. Investigation of Tunnel Field Effect Transistors (TFETs) for Label Free Biosensing. 7. Analog and Linearity Analysis of Vertical Nanowire TFET. 8. Effect of Variation in Gate Material on Enhancement mode P-GaN AlGaN/ GaN HEMT. 9. Electrical Modeling of One Selector-One resistor (1S-1R) for Mitigating the Sneak. 10. SRAM: An Essential Part of Integrated Circuits. 11. Implementation of 512bit SRAM Tile using Lector Technique for Leakage Power Reduction. 12. Characterization of Stochastic Process Variability Effects on Nano-scale Analog Circuits. 13. Versatile Single Input Single Output Filter Topology Suitable for Integrated Circuits. 14. Secured Integrated Circuit (IC/IP) Design Flow.

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• Circuitos e componentes
• Ciência da Computação

SRAM Cell;6T SRAM;MOS Transistor;Spin Current;HEMT;Free Layer;STT;6T SRAM Cell;AP Filter;NW FETs;Power Consumption;SRAM Designer;Static Noise Margin;Spin Polarization;Full Adder;SCEs;SS;Sense Amplifier;RRAM Device;Write Operation;Threshold Voltage;Read Operation;GaN HEMT;Energy Band Diagram;IP Core