FinFET Devices for VLSI Circuits and Systems
portes grátis
FinFET Devices for VLSI Circuits and Systems
Saha, Samar K.
Taylor & Francis Ltd
01/2025
318
Mole
9780367515560
Pré-lançamento - envio 15 a 20 dias após a sua edição
Descrição não disponível.
Chapter 1 Introduction...........................................................................................1
Chapter 2 Fundamentals of Semiconductor Physics............................................25
Chapter 3 Multiple-Gate Metal-Oxide-Semiconductor (MOS) System..............85
Chapter 4 Overview of FinFET Device Technology......................................... 133
Chapter 5 Large Geometry FinFET Device Operation..................................... 151
Chapter 7 Leakage Currents in FinFETs........................................................... 215
Chapter 8 Parasitic Elements in FinFETs.......................................................... 231
Chapter 9 Challenges to FinFET Process and Device Technology .................. 257
Chapter 10 FinFET Compact Models for Circuit Simulation..............................277
Index.......................................................................................................................309
Chapter 2 Fundamentals of Semiconductor Physics............................................25
Chapter 3 Multiple-Gate Metal-Oxide-Semiconductor (MOS) System..............85
Chapter 4 Overview of FinFET Device Technology......................................... 133
Chapter 5 Large Geometry FinFET Device Operation..................................... 151
Chapter 7 Leakage Currents in FinFETs........................................................... 215
Chapter 8 Parasitic Elements in FinFETs.......................................................... 231
Chapter 9 Challenges to FinFET Process and Device Technology .................. 257
Chapter 10 FinFET Compact Models for Circuit Simulation..............................277
Index.......................................................................................................................309
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
VLSI Circuit;MOS Capacitor;Physical Electronics;Drain Current Model;Capacitor Systems, Compact Modeling;Mathematical Expressions;Circuits;Subthreshold Swing;Microelectronics;Gate Oxide Thickness;Semiconductors;SDE;IC Fabrication;QM Effect;fin field-effect transistor devices;Inversion Charge Density;very large scale integrated circuits;Inversion Carriers;metal-oxide-semiconductor capacitor systems;Volume Inversion;integrated circuits fabrication technology;Drain End;Depletion Region;Inversion Charge;Leakage Current;Surface Potential Function;Silicon Fin;Inversion Layer;FinFET Devices;EUV Lithography;Oxide Spacers;Source Drain Spacer;Drain Current;Dopant Fluctuations;DIBL
Chapter 1 Introduction...........................................................................................1
Chapter 2 Fundamentals of Semiconductor Physics............................................25
Chapter 3 Multiple-Gate Metal-Oxide-Semiconductor (MOS) System..............85
Chapter 4 Overview of FinFET Device Technology......................................... 133
Chapter 5 Large Geometry FinFET Device Operation..................................... 151
Chapter 7 Leakage Currents in FinFETs........................................................... 215
Chapter 8 Parasitic Elements in FinFETs.......................................................... 231
Chapter 9 Challenges to FinFET Process and Device Technology .................. 257
Chapter 10 FinFET Compact Models for Circuit Simulation..............................277
Index.......................................................................................................................309
Chapter 2 Fundamentals of Semiconductor Physics............................................25
Chapter 3 Multiple-Gate Metal-Oxide-Semiconductor (MOS) System..............85
Chapter 4 Overview of FinFET Device Technology......................................... 133
Chapter 5 Large Geometry FinFET Device Operation..................................... 151
Chapter 7 Leakage Currents in FinFETs........................................................... 215
Chapter 8 Parasitic Elements in FinFETs.......................................................... 231
Chapter 9 Challenges to FinFET Process and Device Technology .................. 257
Chapter 10 FinFET Compact Models for Circuit Simulation..............................277
Index.......................................................................................................................309
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
VLSI Circuit;MOS Capacitor;Physical Electronics;Drain Current Model;Capacitor Systems, Compact Modeling;Mathematical Expressions;Circuits;Subthreshold Swing;Microelectronics;Gate Oxide Thickness;Semiconductors;SDE;IC Fabrication;QM Effect;fin field-effect transistor devices;Inversion Charge Density;very large scale integrated circuits;Inversion Carriers;metal-oxide-semiconductor capacitor systems;Volume Inversion;integrated circuits fabrication technology;Drain End;Depletion Region;Inversion Charge;Leakage Current;Surface Potential Function;Silicon Fin;Inversion Layer;FinFET Devices;EUV Lithography;Oxide Spacers;Source Drain Spacer;Drain Current;Dopant Fluctuations;DIBL
