Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
Mohankumar, N.
Taylor & Francis Ltd
09/2023
130
Mole
Inglês
9780367554156
15 a 20 dias
Descrição não disponível.
1. Introduction to III-V materials and HEMT Structure. 2. III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown Applications. 3. III-V Hetero Structure Devices for High Frequency Applications. 4. Overview of THz Applications. 5. Device and Simulation Framework of InAs HEMTs. 6. Single Gate (SG)InAs Based HEMTs Architecture for THz Applications. 7. Effect of Gate Scaling and Composite Channel in InAsHEMT. 8. Double Gate (DG) InAs Based HEMT Architecture for THz Applications. 9. Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTs. 10. Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG) - HEMT
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semiconductor device modeling;quantum well transistors;electronic noise analysis;nanodevice simulation;microwave circuit design;advanced semiconductor physics;terahertz frequency device engineering
1. Introduction to III-V materials and HEMT Structure. 2. III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown Applications. 3. III-V Hetero Structure Devices for High Frequency Applications. 4. Overview of THz Applications. 5. Device and Simulation Framework of InAs HEMTs. 6. Single Gate (SG)InAs Based HEMTs Architecture for THz Applications. 7. Effect of Gate Scaling and Composite Channel in InAsHEMT. 8. Double Gate (DG) InAs Based HEMT Architecture for THz Applications. 9. Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTs. 10. Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG) - HEMT
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
