High-k Materials in Multi-Gate FET Devices

High-k Materials in Multi-Gate FET Devices

Singla, Parveen; Tayal, Shubham; Davim, J. Paulo

Taylor & Francis Ltd

09/2021

164

Dura

Inglês

9780367639686

15 a 20 dias

376

Descrição não disponível.
Chapter 1 Introduction to Multi-Gate FET Devices

Chapter 2 High-k Gate Dielectrics and Metal Gate Stack Technology for

Advance Semiconductor Devices: An Overview

Chapter 3 Influence of High-k Material in Gate Engineering and in

Multi-Gate Field Effect Transistor Devices

Chapter 4 Trap Charges in High-k and Stacked Dielectric

Chapter 5 Impact of High-k Dielectric on the Gate-Induced Drain

Leakage of Multi-Gate FETs

Chapter 6 Advanced FET Design Using High-k Gate Dielectric and

Characterization for Low-Power VLSI

Chapter 7 Simulation and Analysis of Gate Stack DG MOSFET with

Application of High-k Dielectric Using Visual TCAD

Chapter 8 Novel Architecture in Gate All-Around (GAA) MOSFET

with High-k Dielectric for Biomolecule Detection

Chapter 9 Asymmetric Junctionless Transistor: A SRAM

Performance Study

Chapter 10 Performability Analysis of High-k Dielectric-Based

Advanced MOSFET in Lower Technology Nodes

Index
Low Power VLSI;SCEs;FET;Oxide Semiconductor Field Effect Transistor;Field Effect Transistors;Multi-gate Devices;SRAM Cell;Gate Oxide;Equivalent Oxide Thickness;Gate Stack;Power Consumption;Gate Terminal;GIDL;MOSFET Device;MOS Transistor;Trap Charges;Flat Band Voltage;Steep Sub-threshold Slope;Carbon Nanotube FETs;Nanowire FET;Conventional MOSFET;Gate Drain Overlap;6T SRAM Cell;Access Transistor;Sentaurus TCAD