Design Rules in a Semiconductor Foundry

Design Rules in a Semiconductor Foundry

Shauly, Eitan N.

Jenny Stanford Publishing

11/2022

808

Dura

Inglês

9789814968003

15 a 20 dias

1075

Descrição não disponível.
1. Layout Design Rules: Definition, Setting and Scaling 2. Front-End-Of-Line Topological Design Rules 3. Back-End-Of-Line Topological Design Rules 4. Coverage Rules and Insertion Utilities 5. Design Rules, Guidelines and Modeling for Analog Modules 6. Stress-Related Design Rules and Modeling 7. Dedicated Design Rules for Memory Modules 8. Planar CMOS Process Flow for Digital, Mixed-Signal and RFCMOS Applications 9. Reliability Driven Design Rules
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Gox;Poly Gate;Sheet Resistance;SEM Top View;Mim Capacitor;CMP Process;Junction Leakage;Gate Oxide Thickness;Thick Gate Oxide;Threshold Voltage;Gate Dielectrics;Dummy Fill;Contact Etch Stop Layer;AR;GBs;Capacitance Density;Weibull Slope;Interface State Generation;Fill Insertion;SBD;Stress Voltage;Oxygen Precipitates;Pad Oxide;Extension Implants;Poly Resistors