Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
Mohankumar, N.
Taylor & Francis Ltd
09/2021
130
Dura
Inglês
9780367554149
15 a 20 dias
453
Descrição não disponível.
1. Introduction to III-V materials and HEMT Structure. 2. III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown Applications. 3. III-V Hetero Structure Devices for High Frequency Applications. 4. Overview of THz Applications. 5. Device and Simulation Framework of InAs HEMTs. 6. Single Gate (SG)InAs Based HEMTs Architecture for THz Applications. 7. Effect of Gate Scaling and Composite Channel in InAsHEMT. 8. Double Gate (DG) InAs Based HEMT Architecture for THz Applications. 9. Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTs. 10. Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG) - HEMT
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III-V materials;Gate Recess;Composite Channel;Terahertz Sources;Amplifiers;HEMT;Microwaves;Short Channel Effects;HEMT Device;DIBL;Sheet Carrier Density;SS;Gate Length;Pseudomorphic HEMT;RF Performance;Drain Current;Gate Source Voltage;GaN HEMTs;InGaAs Channel;InAs Channel;Channel Thickness;InP HEMT;Threshold Voltage;Power Added Efficiency;Sentaurus TCAD;Metal Semiconductor Field Effect Transistor;THz Radiation;Sentaurus Device;Threading Dislocation;Minimum Noise Figure
1. Introduction to III-V materials and HEMT Structure. 2. III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown Applications. 3. III-V Hetero Structure Devices for High Frequency Applications. 4. Overview of THz Applications. 5. Device and Simulation Framework of InAs HEMTs. 6. Single Gate (SG)InAs Based HEMTs Architecture for THz Applications. 7. Effect of Gate Scaling and Composite Channel in InAsHEMT. 8. Double Gate (DG) InAs Based HEMT Architecture for THz Applications. 9. Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTs. 10. Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG) - HEMT
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
III-V materials;Gate Recess;Composite Channel;Terahertz Sources;Amplifiers;HEMT;Microwaves;Short Channel Effects;HEMT Device;DIBL;Sheet Carrier Density;SS;Gate Length;Pseudomorphic HEMT;RF Performance;Drain Current;Gate Source Voltage;GaN HEMTs;InGaAs Channel;InAs Channel;Channel Thickness;InP HEMT;Threshold Voltage;Power Added Efficiency;Sentaurus TCAD;Metal Semiconductor Field Effect Transistor;THz Radiation;Sentaurus Device;Threading Dislocation;Minimum Noise Figure
